[Hiring] Non-Volatile Memory Circuit Design Engineer @TGG Accounting

Role Description

A growing, privately held semiconductor design engineering firm specializing in custom integrated circuit (IC) layout, analog circuit design, and technology development is seeking a Non-Volatile Memory Circuit Design Engineer to join its expanding team. This is an opportunity to become the company's first dedicated non-volatile memory designer, take ownership of critical technical work, and potentially build and lead a team as the organization continues to grow.

Responsibilities

• Lead non-volatile memory (NVM) circuit design and architecture, including chip-level architecture, circuit development, and simulation.
• Independently design and develop critical memory circuits, including sense amplifiers, write circuits, and decoders.
• Contribute to additional memory design functions such as address transition detection (ATD), self-timed sensing, charge pumps, and redundancy circuitry.
• Lead technical decision-making while remaining actively involved in hands-on circuit design, with approximately 70% of the role dedicated to design execution and 30% focused on architecture, design reviews, and test planning.
• Develop and present design reviews, test plans, and silicon characterization strategies.
• Support post-silicon bring-up, debugging, characterization, and productization efforts.
• Collaborate with cross-functional teams spanning analog design, IC layout, and quality to deliver complete custom ASIC solutions.
• Apply industry-standard Cadence and Synopsys design flows, along with scripting tools as needed, to support efficient design development and verification.
• Serve as the technical pioneer for NVM design within the organization, with the opportunity to mentor future team members and build a dedicated team as the business grows.

Qualifications

• Bachelor’s degree in Electrical Engineering (BSEE) or a related field; a master’s degree is not required.
• Must be a U.S. citizen or lawful permanent resident to meet applicable ITAR requirements.
• Typically 10+ years of professional integrated circuit design experience, with the majority focused on hands-on memory circuit design; exceptionally strong candidates with 7–8 years may be considered.
• Demonstrated personal design ownership of non-volatile memory circuits in a commercial engineering environment—not solely academic, simulation, testing, characterization, or support experience.
• Required hands-on design experience with sense amplifiers, write circuits, and decoders.
• Strong expertise in Cadence and/or Synopsys IC design flows and a thorough understanding of silicon development tools, processes, and best practices.
• Solid understanding of analog and digital/mixed-signal circuit design, along with strong analytical, debugging, and communication skills.
• Ability to contribute to chip-level architecture, design reviews, test planning, and post-silicon productization.

Preferred Skills

• Preferred experience with additional NVM technologies, including NOR/NAND Flash, MRAM, and ReRAM/RRAM; process nodes ranging from 180nm through FinFET; and advanced memory circuit development.
• Experience with ATD, self-timed sensing, charge pumps, redundancy, RTL design, design verification, DFM, or DFMEA is a plus.
• Programming or scripting experience with Python, PERL, SKILL, or TCL is beneficial.
• Strong interpersonal skills and a collaborative, humble, and self-motivated approach to technical problem-solving.